A unified analytical model for drain-induced barrier lowering and drain-induced high electric field in a short-channel MOSFET

This publication has 15 references indexed in Scilit:

• Threshold voltage in short-channel MOS devices
  IEEE Transactions on Electron Devices, 1985
• Performance Limits of CMOS ULSI
  IEEE Journal of Solid-State Circuits, 1985
• Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement
  IEEE Journal of Solid-State Circuits, 1985
• An analytical model for the channel electric field in MOSFET's with graded-drain structures
  IEEE Electron Device Letters, 1984
• A simple punchthrough model for short-channel MOSFET's
  IEEE Transactions on Electron Devices, 1983
• A simplified model of short-channel MOSFET characteristics in the breakdown mode
  IEEE Transactions on Electron Devices, 1983
• Short-channel MOST threshold voltage model
  IEEE Journal of Solid-State Circuits, 1982
• VLSI limitations from drain-induced barrier lowering
  IEEE Transactions on Electron Devices, 1979
• Hot-electron emission in N-channel IGFET's
  IEEE Transactions on Electron Devices, 1979
• A simple two-dimensional model for IGFET operation in the saturation region
  IEEE Transactions on Electron Devices, 1977