Cryogenic, low-noise, balanced amplifiers for the 300–1200 MHz band using heterostructure field-effect transistors
- 31 March 1999
- journal article
- Published by Elsevier in Nuclear Physics B - Proceedings Supplements
- Vol. 72, 137-144
- https://doi.org/10.1016/s0920-5632(98)00516-7
Abstract
No abstract availableKeywords
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