Triggering and sustaining of snapback in MOSFETs
- 31 May 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (5) , 717-721
- https://doi.org/10.1016/0038-1101(92)90042-b
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- New physical model of multiplication-induced breakdown in MOSFETsSolid-State Electronics, 1991
- n-channel MOSFET breakdown characteristics and modeling for p-well technologiesIEEE Transactions on Electron Devices, 1988
- Carrier multiplication in the pinchoff region of m.o.s. transistorsElectronics Letters, 1971