Treatment of Ionized Impurity Scattering in Degenerate Semiconductors. Combination of the Variational and Perturbational Technique in the Partial-Wave Method

Publisher Website
Google Scholar
Abstract
Using the variational technique for the calculation of the zeroth-order phase shift and the perturbational technique for obtaining the higher order phase shifts, an analytic expression is derived for the total scattering cross section of ionized impurity scattering in degenerate semiconductors. The formula obtained may be looked upon as resulting from a refinement of the first Born approximation and its significance lies in the fact that it is valid in a doping region where neither the uncorrected Born approximation nor the simplest form of the partial-wave method (based on using only a variationally determined zeroth-order phase shift) can be applied for the calculation of the resistivity of ionized impurity scattering.