Reactive ion etch characteristics of thin InGaAs and AlGaAs stop-etch layers
- 1 September 1989
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (5) , 619-622
- https://doi.org/10.1007/bf02657476
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Selective dry etching of GaAs over AlGaAs in SF6/SiCl4 mixturesJournal of Vacuum Science & Technology B, 1988
- Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devicesApplied Physics Letters, 1987
- Reactive ion etch process with highly controllable GaAs-to-AlGaAs selectivity using SF6 and SiCl4Applied Physics Letters, 1987
- An analytical study of etch and etch-stop reactions for GaAs on AlGaAs in CCl2F2 plasmaJournal of Applied Physics, 1987
- Selective GaAs/AlxGa1−xAs reactive ion etching using CCl2F2Journal of Vacuum Science & Technology B, 1986
- Chemical etching of GaAs and InP by chlorine: The thermodynamically predicted dependence on Cl2 pressure and temperatureJournal of Vacuum Science & Technology B, 1986
- Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Selective Dry Etching of AlGaAs-GaAs HeterojunctionJapanese Journal of Applied Physics, 1981