MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3 in and analyses of adducts formed during the growth process
- 1 July 1984
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 13 (4) , 703-726
- https://doi.org/10.1007/bf02653990
Abstract
No abstract availableKeywords
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