Propagation of picosecond electrical pulses on a silicon-based microstrip line with buried cobalt silicide ground plane
- 10 June 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (23) , 2604-2606
- https://doi.org/10.1063/1.104836
Abstract
A microstrip line with a highly conducting cobalt silicide (CoSi2) ground plane buried 7 μm below the surface of a single‐crystal silicon wafer is presented. This new transmission line shows significantly reduced dispersion up to 100 GHz bandwidth compared to a conventional microstrip line with the ground plane on the back of the substrate, while being able to support active devices in the silicon dielectric. After propagating 5 mm, the rise time (10%–90%) of an electrical pulse increases only from 2.5 to 3.7 ps as opposed to an increase from 2.7 to 11.3 ps on a conventional microstrip line.Keywords
This publication has 8 references indexed in Scilit:
- Formation of continuous CoSi2 layers by high Co dose implantation into Si(100)Journal of Applied Physics, 1990
- Anisotropic strain relaxation in buried CoSi2 layers formed by mesotaxyJournal of Applied Physics, 1990
- Proposed ultrahigh frequency microstrip utilising buried silicide groundplaneElectronics Letters, 1990
- Modeling of picosecond pulse propagation in microstrip interconnections of integrated circuitsIEEE Transactions on Microwave Theory and Techniques, 1989
- Efficient generation of 480 fs electrical pulses on transmission lines by photoconductive switching in metalorganic chemical vapor deposited CdTeApplied Physics Letters, 1989
- Mesotaxy: Single-crystal growth of buried CoSi2 layersApplied Physics Letters, 1987
- Generation of subpicosecond electrical pulses on coplanar transmission linesApplied Physics Letters, 1986
- An Approximate Dispersion Formula of Microstrip Lines for Computer-Aided Design of Microwave Integrated CircuitsIEEE Transactions on Microwave Theory and Techniques, 1979