0.15 μm T-gate E-beam lithography using crosslinked P(MMA/MMA) developed in ortho-xylene resulting in high contrast and high plasma stability for dry etched recess gate pseudomorphic MODFETs for MMIC production
- 31 January 1994
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 23 (1-4) , 437-440
- https://doi.org/10.1016/0167-9317(94)90190-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- High gain 70–80 GHz MMIC amplifiers in coplanar waveguide technologyElectronics Letters, 1993
- 28–51 GHz dynamic frequency divider based on 0.15 μm T-gate Al 0.2 Ga 0.8 As/In 0.25 Ga 0.75 As MODFETsElectronics Letters, 1993
- Very broadband distributed amplifier to 75 GHzElectronics Letters, 1993
- E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs CircuitsJapanese Journal of Applied Physics, 1990