Two‐phase structure of plasma‐polymerized thiophene‐passivated GaAs Schottky‐like metal‐insulator‐semiconductor diodes

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Abstract
Recently GaAs metal‐semiconductor Schottky and plasma‐polymerized thiophene‐passivated metal‐insulator‐semiconductor (MIS) diodes were studied. The capacitance‐voltage (C‐V) results were evaluated by a simple mechanical application of the Schottky capacitance theory to the MIS devices. In this communication it is shown that there is a large discrepancy between the experimental C‐V characteristics obtained for the MIS diodes and the theoretical ones following from the depletion layer capacitance theory. The only reasonable explanation of this discrepancy is a two‐phase structure of the MIS devices, where one phase has a low‐ and the other has a high‐voltage intercept of the C−2‐V plot.