Temperature dependence of threshold voltage in thin-film SOI MOSFETs
- 1 August 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (8) , 329-331
- https://doi.org/10.1109/55.57923
Abstract
A first-order model for the temperature dependence of threshold voltage in thin-film silicon-on-insulator (SOI) n-MOSFETs is described. The temperature dependence of the threshold voltage of thin-film SOI n-channel MOSFETs is analyzed. Threshold voltage variation with temperature is significantly smaller in thin-film (fully depleted) devices than in thick-film SOI and bulk devices. The threshold voltage is shown to be dependent on the depletion level of the device, i.e. whether it is fully depleted or not. There exists a critical temperature below which the device is fully depleted, and above which the device operates in the thick-film regime.Keywords
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