Interface quality of SiGe oxide prepared by RF plasmaanodisation
- 10 November 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (23) , 1988-1989
- https://doi.org/10.1049/el:19941315
Abstract
The latest progress in RF plasma anodisation of SiGe alloys at 80°C is reported. Compared with the authors' previous results, considerable improvement in interfacial quality has been achieved. However, unlike the thermally grown samples, no negative fixed oxide charges were found.Keywords
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