Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD
- 1 October 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (10) , 449-451
- https://doi.org/10.1109/55.43096
Abstract
The authors present the fabrication and characterization of ion-implanted graded In/sub x/Ga/sub 1-x/As/GaAs MESFETs. The In/sub x/Ga/sub 1-x/As layers are grown on GaAs substrates by MOCVD (metal-organic chemical vapor deposition) with InAs concentration graded from 15% at the substrate to 0% at the surface. 0.5- mu m gate MESFETs are fabricated on these wafers using silicon ion implantation. In addition to improved Schottky contact, the graded In/sub x/Ga/sub 1-x/As MESFET achieves maximum extrinsic transconductance of 460 mS/mm and a current-gain cutoff frequency f/sub t/ of 61 GHz, which is the highest ever reported for a 0.5- mu m gate MESFET. In comparison, In/sub 0.1/Ga/sub 0.9/As MESFETs fabricated with the same processing technique show an f/sub t/ of 55 GHz.<>Keywords
This publication has 6 references indexed in Scilit:
- High-performance millimeter-wave ion-implanted GaAs MESFETsIEEE Electron Device Letters, 1989
- Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETsIEEE Electron Device Letters, 1988
- High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAsIEEE Electron Device Letters, 1988
- High-current, planar-doped pseudomorphic hemts Ga 0.4 In 0.6 As/Al 0.48 In 0.52 As HEMTsElectronics Letters, 1988
- The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 KIEEE Electron Device Letters, 1982
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974