Improved laser performance due to spatial separation of heavy- and light-hole states in compressive- and tensile-strained structures

This publication has 18 references indexed in Scilit:

• Antimony-based strained-layer 2-2.5 mu m quantum well lasers
  Semiconductor Science and Technology, 1993
• Low threshold 1.5 μm tensile-strained single quantum well lasers
  Electronics Letters, 1991
• Strain-compensated strained-layer superlattices for 1.5 μm wavelength lasers
  Applied Physics Letters, 1991
• Heterojunction band offsets and effective masses in III-V quaternary alloys
  Semiconductor Science and Technology, 1991
• Valence band engineering in strained-layer structures
  Semiconductor Science and Technology, 1989
• Band lineups and deformation potentials in the model-solid theory
  Physical Review B, 1989
• Heterostructures Of Lattice Mismatched Semiconductors: Fundamental Aspects And Device Perspectives
  Published by SPIE-Intl Soc Optical Eng ,1988
• Theoretical calculations of heterojunction discontinuities in the Si/Ge system
  Physical Review B, 1986
• Correction to "Reduction of lasing threshold current density by the lowering of valence band effective mass"
  Journal of Lightwave Technology, 1986
• Band-structure engineering for low-threshold high-efficiency semiconductor lasers
  Electronics Letters, 1986