Antimony-based strained-layer 2-2.5 mu m quantum well lasers
- 1 August 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (8) , 1655-1661
- https://doi.org/10.1088/0268-1242/8/8/028
Abstract
The authors present calculations which show that compressive or tensile strain introduced into the well material of InGaAsSb/AlGaSb quantum well lasers reduces the threshold current density compared with double heterostructure and lattice-matched lasers. The operating wavelength can be close to 2.55 mu m, the region of lowest attenuation in fluoride glass fibres.Keywords
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