VPE-Grown 1.3 µm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers
- 1 July 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (7A) , L415
- https://doi.org/10.1143/jjap.22.l415
Abstract
Hydride-VPE grown 1.3 µm InGaAsP/InP double-channel planar buried-heterostructure laser diodes with LPE burying layers were fabricated. 19.5 mA CW threshold current, 47% external differential quantum efficiency, both at 25°C, 50 mW CW operation, high-temperature CW operation up to 120°C and threshold characteristic temperature T0 as high as 72 K, have been obtained.Keywords
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