Study of lateral non-uniformity as a function of junction depth in ultra-shallow junctions and its effect on leakage behavior in as-deposited polycrystalline Si and amorphous Si diodes
- 1 July 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (7) , 955-960
- https://doi.org/10.1016/0038-1101(93)90110-c
Abstract
No abstract availableKeywords
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