In situ grown Schottky gates on GaAs/AlGaAs heterojunctions
- 1 November 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (11) , 1139-1142
- https://doi.org/10.1088/0268-1242/3/11/012
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Many-Body Effects in a Modulation-Doped Semiconductor Quantum WellPhysical Review Letters, 1987
- Wavelength-dependent photoconduction effects on the second sub-band occupancy in (Al, Ga)As/GaAs heterojunctionsSemiconductor Science and Technology, 1987
- The role of surface charging and potential redistribution on the kinetics of hole injection reactions at n-GaAsElectrochimica Acta, 1987
- The effects of vacuum conditions on epitaxial Al/GaAs contacts formed by molecular-beam epitaxyJournal of Applied Physics, 1986
- Mobility of the two-dimensional electron gas at selectively doped n -type As/GaAs heterojunctions with controlled electron concentrationsPhysical Review B, 1986
- Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular-beam epitaxyJournal of Applied Physics, 1986
- Observation of strong localization effects in (AlGa)As–GaAs two-dimensional electron gas structures at low magnetic fieldsJournal of Vacuum Science & Technology B, 1986
- Mobility Modulation of the Two-Dimensional Electron Gas Via Controlled Deformation of the Electron Wave Function in Selectively Doped AlGaAs-GaAs HeterojunctionsPhysical Review Letters, 1985
- Quantum galvanomagnetic properties of two-dimensional electron gas in AlxGa1−xAs/GaAs heterojunction FET in strong magnetic fieldsSurface Science, 1982
- New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall ResistancePhysical Review Letters, 1980