Solid phase epitaxy of evaporated amorphous silicon films
- 15 October 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (8) , 874-876
- https://doi.org/10.1063/1.95439
Abstract
Amorphous silicon films were deposited in an electron beam evaporator. Substrates of silicon (100) wafers with predeposited epitaxial films were held at 380 °C to avoid porosity. Processing of the films before annealing may include implantation. Solid state epitaxy is then achieved by annealing at 600 °C for 30 min.Keywords
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