Impurity-band density of states in heavily doped semiconductors: Numerical results
- 15 February 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (4) , 2776-2780
- https://doi.org/10.1103/physrevb.25.2776
Abstract
The "band-tail" density of states available to electrons in a field of randomly distributed, attractive impurities developed in previous work is extended to higher energy . Numerical values of are also presented (1) for comparison with developed by other methods and (2) for calculation of optical and other properties of heavily doped semiconductors depending on .
Keywords
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