On the systematic analytical solutions for minority-carrier transport in nonuniform doped semiconductors: application to solar cells
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (6) , 1181-1183
- https://doi.org/10.1109/16.214751
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- An analytical solution for the collection efficiency of solar-cell emitters with arbitrary doping profileIEEE Transactions on Electron Devices, 1990
- Review of analytical models for the study of highly doped regions of silicon devicesIEEE Transactions on Electron Devices, 1989
- Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped siliconIEEE Transactions on Electron Devices, 1986
- The physics and modeling of heavily doped emittersIEEE Transactions on Electron Devices, 1984