An analytical solution for the collection efficiency of solar-cell emitters with arbitrary doping profile
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (2) , 358-364
- https://doi.org/10.1109/16.46367
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Review of analytical models for the study of highly doped regions of silicon devicesIEEE Transactions on Electron Devices, 1989
- Analytical solution of minority-carrier transport in silicon solar cell emittersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- PC-1D version 2: enhanced numerical solar cell modellingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped siliconIEEE Transactions on Electron Devices, 1986
- Measuring and modeling minority carrier transport in heavily doped siliconSolid-State Electronics, 1985
- The physics and modeling of heavily doped emittersIEEE Transactions on Electron Devices, 1984
- The effects of phosphorus precipitation on the open-circuit voltage in N+/P silicon solar cellsSolar Cells, 1984
- Relationship between the blue response and open-circuit voltage of high performance silicon solar cellsIEEE Transactions on Electron Devices, 1983
- Transport equations for the analysis of heavily doped semiconductor devicesSolid-State Electronics, 1981