Impurity-Assisted Intervalley Electron Scattering in Boron-Doped Silicon
- 1 June 1969
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 26 (6) , 1435-1436
- https://doi.org/10.1143/jpsj.26.1435
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Impurity-Assisted Intervalley Electron Scattering of Germanium and Silicon under Uniaxial CompressionJournal of the Physics Society Japan, 1969
- Cyclotron Resonance of Doped SiliconJournal of the Physics Society Japan, 1968
- Electron Scattering by Neutralized Acceptors in Germanium. II. ZincJournal of the Physics Society Japan, 1968
- Temperature and Stress Dependence of Electron Lifetime in-Type Semiconductors Between 1.5 and 4.2°KPhysical Review Letters, 1966
- Acoustoelectric Effect and Intervalley Scattering Rates in Antimony-Doped GermaniumPhysical Review B, 1966
- Ultrasonic Wave Propagation in Doped-Germanium and-SiliconPhysical Review B, 1964
- Acoustoelectric Effect in-Type GermaniumPhysical Review B, 1959