Palladium-gate mos devices for arsine detection
- 31 December 1987
- journal article
- Published by Elsevier in Sensors and Actuators
- Vol. 12 (4) , 333-339
- https://doi.org/10.1016/0250-6874(87)80053-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- An SnO2 thin film for sensing arsineSensors and Actuators, 1985
- Hydrogen induced drift in palladium gate metal-oxide-semiconductor structuresJournal of Applied Physics, 1984
- The influence of different insulators on paladium-gate metal-insulator-semiconductor hydrogen sensorsIEEE Transactions on Electron Devices, 1984
- Modified palladium metal-oxide-semiconductor structures with increased ammonia gas sensitivityApplied Physics Letters, 1983
- Hydrogen sensitive mos-structuresSensors and Actuators, 1981
- A fully implanted NMOS, CMOS, bipolar technology for VLSI of analog-digital systemsIEEE Journal of Solid-State Circuits, 1979
- Chemical reactions on palladium surfaces studied with Pd-MOS structuresSurface Science, 1977
- Detection of H2S with Pd-gate MOS field-effect transistorsJournal of Applied Physics, 1976
- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975