Dependence of valence-subband structures on the substrate orientation in ZnSxSe1−x/ZnyMg1−ySzSe1−z quantum wells
- 1 August 1993
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (3) , 1822-1825
- https://doi.org/10.1063/1.354788
Abstract
We present a theoretical investigation of the growth orientation dependence of valence‐subband structures in ZnSxSe1−x/ZnyMg1−ySzSe1−z quantum wells grown in the [001], [115], [113], [112], and [111] directions. The results indicate that the in‐plane effective mass of the heavy‐hole subband in the [111]‐oriented structure is substantially smaller than that in the [001] quantum wells. For applications to quantum‐well lasers, the lighter effective mass will lead to a smaller threshold current density, and therefore a better laser performance. Our investigations should provide useful guidelines for the design of II‐VI quantum‐well blue lasers.This publication has 24 references indexed in Scilit:
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