Native-oxide coupled-cavity AlxGa1−xAs-GaAs quantum well heterostructure laser diodes

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Abstract
Data are presented demonstrating AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes consisting of an array of coupled cavities (19 μm long on 22 μm centers, ∼250 μm total length) arranged lengthwise in single 10‐μm‐wide laser stripes. The cavities are defined by a native oxide formed from a significant portion of the high‐gap AlxGa1−xAs upper confining layer. The native oxide (grown at 425 °C in H2O vapor+N2 carrier gas) confines the injected carriers and optical field within the cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe. These diodes exhibit single‐longitudinal‐mode operation over an extended range (relative to similar diodes fabricated without multiple cavities). At high current injection levels, longitudinal‐mode spectra demonstrate unambiguously oscillation from the internal coupled cavities.