Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence
- 1 July 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (7R) , 3894-3899
- https://doi.org/10.1143/jjap.37.3894
Abstract
Highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) method with a glass/ITO/CdS/CdTe/Cu-doped carbon/Ag structure were characterized by low-temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to VCd–Cl defect complexes appeared as a result of CdCl2 treatment. CdS/CdTe junction PL revealed that a CdS x Te1-x mixed crystal layer was formed at the CdS/CdTe interface region during the deposition of CdTe by CSS and that CdCl2 treatment promoted the formation of the mixed crystal layer. Furthermore, in the PL spectra of the heat-treated CdTe after screen printing of the Cu-doped carbon electrode, a neutral-acceptor bound exciton (ACu 0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment.Keywords
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