III‐V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material
- 1 May 1991
- journal article
- research article
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 4 (6) , 217-219
- https://doi.org/10.1002/mop.4650040602
Abstract
It is shown that local and large lattice mismatch epitaxies could be useful techniques for the fabrication of optoelectronic integrated circuits. As an example, we fabricated a monolithic resonant photoreceiver which associates a long‐wavelength metal‐semiconductor‐metal photodetector, a GaAs MESFET preamplifier, and an inductor. The GaAs/GalnAs heteroepitaxy needed for the photodetector was selectively grown using a SiO2 mask and the entire circuit was fabricated on a silicon substrate. Compared to a PIN photodiode loaded with a 50‐Ω resistor, more than 10 dB gain was measured at 7 GHz in a microwave optical link.Keywords
This publication has 12 references indexed in Scilit:
- A criterion for the suppression of plastic deformation in laser-assisted chemical vapor deposition of GaAsJournal of Applied Physics, 1990
- First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrateApplied Physics Letters, 1988
- An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectorsIEEE Electron Device Letters, 1988
- Low-temperature (250 °C) selective epitaxy of GaAs films and p-n junction by laser-assisted metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Resonant p-i-n-FET receivers for lightwave subcarrier systemsJournal of Lightwave Technology, 1988
- Selective Area Growth of High Quality GaAs by OMCVD Using Native Oxide MasksJournal of the Electrochemical Society, 1987
- Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructureElectronics Letters, 1987
- InGaAs PIN photodiodes grown on GaAs substrates by metal organic vapour phase epitaxyElectronics Letters, 1987
- Planar monolithic integrated photoreceiver for 1.3–1.55 μm wavelength applications using GaInAs-GaAs heteroepitaxiesApplied Physics Letters, 1986
- High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxyIEEE Electron Device Letters, 1985