Scanning tunneling microscopy at high gap resistances and on chemically modified silicon surfaces
- 1 March 1991
- journal article
- research article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (2) , 1171-1176
- https://doi.org/10.1116/1.585240
Abstract
Scanning tunneling microscopy (STM) studies of organic or biological molecules are difficult to reproduce because strong tip-surface interactions can displace weakly bound material at the surface. We have studied conducting organic monolayers and nucleic acids with out STM instrument at high gap resistance values (100 G-OMEGA to 1 T-OMEGA). We have succeeded in imaging chemically modified silicon surfaces. It is our desire to use these chemically modified surfaces in conjunction with higher gap values in the future to reliably image DNA.Keywords
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