Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates
- 1 December 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (12A) , L1565-1567
- https://doi.org/10.1143/jjap.36.l1565
Abstract
Metalorganic chemical vapor deposition (MOCVD) growth of AlN, GaN and AlGaN on sapphire substrates was investigated, with the aim of realizing high-quality heterostructures with atomically smooth interfaces. AlN with surfaces constructed of single-atomic-layer steps was grown by the two-step growth technique, in which the thin first layer was grown at a low temperature (1250° C) and then the second layer was grown at a high temperature (1350° C). GaN with surfaces consisting of simple atomic-layer steps were successively grown on the AlN layer by optimizing the growth conditions. Marked degradation of surface flatness was not observed for Al0.2Ga0.8N grown on GaN.Keywords
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