Scanning Tunneling Microscopy of Cleaved Si and GaAs Surfaces in Air
- 1 February 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (2A) , L290-292
- https://doi.org/10.1143/jjap.28.l290
Abstract
Microstructures on cleaved Si and GaAs surfaces were directly observed in air by scanning tunneling microscopy (STM). Although an atom-resolved image of surface structures was not obtained, microstructures 15–40 nm in size and 1–30 nm in height were imaged. The comparison between STM and SEM images indicated that STM images reflect the microstructures on cleaved Si and GaAs surfaces. These results revealed that STM measurements are applicable to the characterization of semiconductor surface structures even in air.Keywords
This publication has 9 references indexed in Scilit:
- Defect generation sue to surface corrugation in InGaAsP/InP DFB laser structures grown by MOVPE on grating-formed InP substratesJournal of Crystal Growth, 1988
- Observation of p n junctions on implanted silicon using a scanning tunneling microscopeApplied Physics Letters, 1988
- Investigation of silicon in air with a fast scanning tunneling microscopeJournal of Vacuum Science & Technology A, 1988
- Direct control and characterization of a Schottky barrier by scanning tunneling microscopyApplied Physics Letters, 1988
- Scanning tunneling microscopy and potentiometry on a semiconductor heterojunctionApplied Physics Letters, 1987
- STM applications for semiconductor materials and devicesSurface Science, 1987
- Surface roughness scattering at the Si–SiO2 interfaceJournal of Vacuum Science & Technology B, 1983
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983
- Surface Studies by Scanning Tunneling MicroscopyPhysical Review Letters, 1982