Heterojunction InAlAs/InP MESFETs grown by OMVPE
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (5) , 223-225
- https://doi.org/10.1109/55.697
Abstract
Lattice-matched InAlAs/n-InP and InAlAs/n/sup +/-InP heterostructure MESFETs with extrinsic transconductances of 220 and 155 mS/mm, respectively, have been fabricated on semi-insulating InP substrates. Maximum stable gains of 11.5 dB for the 1.25- mu m-gate n-InP channel and 10 dB for the 1.0- mu m-gate n/sup +/-InP channel devices were measured at 10 GHz. An extrapolated f/sub max/ of 42 GHz was obtained for the n/sup +/-channel MESFET.Keywords
This publication has 3 references indexed in Scilit:
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- High-quality InAlAs grown by organometallic vapor phase epitaxyApplied Physics Letters, 1987
- InxAl1-xAs/InP heterojunction insulated gate field effect transistors (HIGFET's)IEEE Electron Device Letters, 1987