Optical study of microvoids, voids, and local inhomogeneities in amorphous silicon
- 28 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (18) , 2237-2239
- https://doi.org/10.1063/1.106081
Abstract
Elastic light scattering has been used for a study of microstructure in amorphous hydrogenated silicon. A simple theory to get quantitative informations on the microstructure has been presented for the first time, both for Rayleigh and Mie scattering. For optimal very high frequency glow discharge amorphous silicon layers, the presence of voids with diameter between 1 and 20 nm is typical.Keywords
This publication has 6 references indexed in Scilit:
- Wavelength dependence of the scattering loss in fluoride optical fibersOptics Letters, 1990
- Characterization of microvoids in device-quality hydrogenated amorphous silicon by small-angle x-ray scattering and infrared measurementsPhysical Review B, 1989
- Light scattering effects in CPM and PDS measurement on a-Si:H filmsJournal of Non-Crystalline Solids, 1989
- Molecular hydrogen in-Si: HReviews of Modern Physics, 1987
- Influence of plasma excitation frequency fora-Si:H thin film depositionPlasma Chemistry and Plasma Processing, 1987
- Physical microstructure in device-quality hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1984