Doped silicon single electron transistors with single island characteristics
- 10 April 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (15) , 2065-2067
- https://doi.org/10.1063/1.126256
Abstract
Uniformly dopedsingle electron transistors nominally consisting of a single island and two silicontunneling barriers have been fabricated on silicon–on–insulator material. Two operation regimes are found depending upon the gate voltages applied. The structure acts either as a multiple tunnel junctiondevice or as a single electron transistor consisting of a single dot corresponding to the geometrical shape of the device. The multiple tunnel junction behavior is attributed to the formation of additional tunneling barriers, introduced into the structure by the high doping level. We demonstrate that these barriers can be removed by raising the Fermi level via the application of an appropriate gate voltage.Keywords
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