Analytical calculation of the quantum-mechanical transmission coefficient for a triangular, planar-doped potential barrier
- 31 August 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (8) , 821-822
- https://doi.org/10.1016/0038-1101(85)90069-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Hot electron spectroscopyElectronics Letters, 1984
- Importance of electron scattering with coupled plasmon-optical phonon modes in GaAs planar-doped barrier transistorsIEEE Electron Device Letters, 1983
- Quantum mechanical reflection at triangular ‘‘planar-doped’’ potential barriers for transistorsJournal of Applied Physics, 1982
- Planar-doped barriers in GaAs by molecular beam epitaxyElectronics Letters, 1980