Epitaxial recrystallisation of gallium implanted (100) silicon
- 15 May 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 209-210, 663-669
- https://doi.org/10.1016/0167-5087(83)90864-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous SiJournal of Applied Physics, 1982
- Compensating impurity effect on epitaxial regrowth rate of amorphized SiApplied Physics Letters, 1982
- Near-surface regrowth rate effects in high-dose ion-implanted (100) siliconApplied Physics Letters, 1980
- A new technique for observing the amorphous to crystalline transformation in thin surface layers on silicon wafersJournal of Applied Physics, 1980
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- The application of high-resolution Rutherford backscattering techniques to near-surface analysisNuclear Instruments and Methods, 1978
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975
- An X-ray cylindrical texture camera for the examination of thin filmsJournal of Applied Crystallography, 1975