High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices
- 14 June 2003
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 43 (7) , 1011-1020
- https://doi.org/10.1016/s0026-2714(03)00129-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A comparison study of ESD protection for RFIC's: performance vs. parasiticsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Investigation on different ESD protection strategies devoted to 3.3 V RF applications (2 GHz) in a 0.18 μm CMOS processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A study of parasitic effects of ESD protection on RF ICsIEEE Transactions on Microwave Theory and Techniques, 2002
- Analysis and optimization of distributed ESD protection circuits for high-speed mixed-signal and RF applicationsMicroelectronics Reliability, 2002
- Microwave CMOS-device physics and designIEEE Journal of Solid-State Circuits, 1999