Thermodynamic investigations of solid-state Si-metal interactions. II. General analysis of Si-metal binary systems
- 1 November 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (9) , 4542-4549
- https://doi.org/10.1063/1.347162
Abstract
Silicides, amorphous alloys, and metal-induced crystallization of amorphous Si are commonly encountered in solid-state reactions between Si and metals. In order to investigate the possible correlations between these phenomena, a thermodynamic analysis was made on various binary systems consisting of Si and metals. It was revealed that (1) the capability of forming silicides between Si and a transition metal results from the largely negative heat of mixing in a certain medium composition range of the two elements; (2) amorphous Si-metal alloys may form not only in the systems which form silicides, but also in some systems which do not form stable silicides; and (3) the phenomenon of metal-induced crystallization of amorphous Si occurs in a Si-rich composition range of a binary system, which is attributed to the lowering of Si—Si bonding energy, owing to the incorporation of metal species. A model describing the phenomenon is developed.This publication has 17 references indexed in Scilit:
- Electrical resistivity and Hall effect of TiSi2 thin films in the temperature range of 2–300 KJournal of Applied Physics, 1989
- Impurity-stimulated crystallization and diffusion in amorphous siliconApplied Physics Letters, 1988
- Crystallization of amorphous silicon during thin-film gold reactionJournal of Applied Physics, 1987
- Metastable phase formation in titanium-silicon thin filmsJournal of Applied Physics, 1985
- Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantationJournal of Applied Physics, 1985
- Sequential silicide formation between vanadium and amorphous silicon thin-film bilayersJournal of Applied Physics, 1984
- Initial reactions at the interface of Pt and amorphous siliconJournal of Vacuum Science & Technology B, 1983
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Room-temperature interfacial reaction in Au-semiconductor systemsApplied Physics Letters, 1977
- Metal contact induced crystallization in films of amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1972