Sequential silicide formation between vanadium and amorphous silicon thin-film bilayers
- 15 December 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (12) , 3439-3444
- https://doi.org/10.1063/1.333910
Abstract
Solid-state reactions between bilayer thin films of vanadium and amorphous silicon with an excess amount of vanadium have been studied by Rutherford backscattering spectroscopy and Seemann–Bohlin x-ray diffraction. In prior studies of the interaction between vanadium thin films and single-crystal silicon, VSi2 has been the only compound observed. In the present study a sequence of compounds was observed. The first silicide, VSi2, was observed to form at 475 °C. At higher temperatures the compounds V5Si3 and V3Si formed in sequence. The growth of VSi2 is linear in time with an activation energy of 2.3±0.4 eV. The growth of V5Si3 is also linear with an activation energy of 2.5±0.1 eV.This publication has 13 references indexed in Scilit:
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