Formation and Schottky behavior of manganese silicides on n-type silicon
- 1 October 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (10) , 6885-6890
- https://doi.org/10.1063/1.330029
Abstract
The formation of manganese silicides on Si has been studied by using Rutherford backscattering spectroscopy and glancing‐incidence x‐ray diffraction; electrical properties of these silicides on n‐Si have been studied by current‐voltage measurement of Schottky barrier height and four‐probe measurement of sheet resistivity. Two silicides have been identified: MnSi formed at 400 °C and MnSi1.7 at 500 °C. The former obeys a parabolic growth in layer form with an activation energy of 1.9 eV, yet the latter grows in patches and is governed by a linear growth. The values of Schottky barrier height on n‐type Si of these two silicides are very close: 0.65 and 0.67 eV, respectively, but their sheet resistivities differ significantly: 220 μΩ cm for MnSi and 4100 μΩ cm for MnSi1.7.This publication has 14 references indexed in Scilit:
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