Morphological transition of Ge islands on Si(001) grown by LPCVD
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- SiGe Island Shape Transitions Induced by Elastic RepulsionPhysical Review Letters, 1998
- Si growth on partially relaxed Ge islandsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Coarsening of Self-Assembled Ge Quantum Dots on Si(001)Physical Review Letters, 1998
- Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to DomesScience, 1998
- Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressuresJournal of Applied Physics, 1997
- Photoluminescence and electroluminescence of SiGe dots fabricated by island growthApplied Physics Letters, 1995
- STM study of the Ge growth mode on Si(001) substratesApplied Surface Science, 1994
- Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxyApplied Physics Letters, 1993
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990