Defect identification in electron-irradiated GaAs
- 15 December 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 26 (12) , 7090-7092
- https://doi.org/10.1103/physrevb.26.7090
Abstract
The introduction rates of the main electron traps created by electron irradiations have been measured as a function of the composition of the solid solution system in the range; they are not dependent. Discussing the recent results given in the literature, it appears that the defects created could be and .
Keywords
This publication has 12 references indexed in Scilit:
- Anisotropic-Defect Production in Compound Semiconductors by Electron IrradiationPhysical Review Letters, 1982
- Electron spin resonance of AsGa antisite defects in fast neutron-irradiated GaAsApplied Physics Letters, 1982
- Anisotropic-Defect Introduction in GaAs by Electron IrradiationPhysical Review Letters, 1981
- The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPRSolid State Communications, 1981
- An annealing study of electron irradiation-induced defects in GaAsJournal of Applied Physics, 1980
- Energy dependence of deep level introduction in electron irradiated GaAsJournal of Applied Physics, 1980
- Identification of the defect state associated with a gallium vacancy in GaAs andPhysical Review B, 1977
- EPR Observation of Close Frenkel Pairs in Irradiated ZnSePhysical Review Letters, 1974
- Orientation Dependence of Electron Radiation Damage in InSbPhysical Review B, 1964
- XXV. On some orbits of an electronJournal of Computers in Education, 1913