Incoherent Light Annealing of Selectively Implanted GaAs for Mesfet Applications
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Infrared rapid thermal annealing for GaAs device fabricationJournal of Applied Physics, 1983
- Selective implantation of GaAs for MESFET applicationsElectronics Letters, 1983
- Electrical properties of S implants in GaAs activated by infrared rapid thermal annealingJournal of Applied Physics, 1983
- Radiation Annealing of Si- and S-Implanted GaAsJapanese Journal of Applied Physics, 1983
- Rapid Thermal Annealing of Si-Implanted GaAsMRS Proceedings, 1983
- Incoherent annealing of implanted layers in GaAsIEEE Electron Device Letters, 1982
- Radiation Annealing of GaAs Implanted with SiJapanese Journal of Applied Physics, 1981