Auger electron spectroscopy of hydrogenated amorphous silicon as a tool to give evidence of a slight recrystallization
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 241-243
- https://doi.org/10.1016/0022-3093(83)90566-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Electronic states and total energies in hydrogenated amorphous siliconPhysical Review B, 1982
- Density of states for cleaved Si (111) fromandAuger spectraPhysical Review B, 1980
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980
- Silane dissociation mechanisms and thin film formation in a low pressure multipole dc dischargeApplied Physics Letters, 1980
- Photoemission studies on in situ prepared hydrogenated amorphous silicon filmsPhilosophical Magazine Part B, 1979
- Linearized secondary-electron cascades from the surfaces of metals. I. Clean surfaces of homogeneous specimensPhysical Review B, 1977
- Transition density of states for Si(100) from L1L23V and L23VV Auger spectraSolid State Communications, 1977
- The determination of electron energy distributions at low energyReview of Scientific Instruments, 1973
- Auger Peaks in the Energy Spectra of Secondary Electrons from Various MaterialsPhysical Review B, 1953
- Zum Einfluß der Spaltbreite auf die Intensitätsverteilung in Spektrallinien. IIZeitschrift für Physik, 1931