Electrical properties in wide optical gap binary Si:H alloy containing a large amount of polysilane
- 30 September 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 51 (10) , 833-837
- https://doi.org/10.1016/0038-1098(84)90479-4
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Optical properties in binary Si: H alloy from disilaneSolid State Communications, 1983
- Estimation methods for localized-state distribution profiles in undoped and phosphorous-dopeda−Si:HPhysical Review B, 1983
- Efficient visible photoluminescence in the binary a-Si:Hx alloy systemApplied Physics Letters, 1983
- Estimation of localized state distribution profiles in undoped and doped a-Si:H by measuring space-charge-limited currentSolid State Communications, 1982
- Electronic Structure of Hydrogenated Amorphous SiliconPhysical Review Letters, 1980
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979
- Stimulated-Dielectric-Relaxation Currents in Thin Film Al-Ce-Al SamplesPhysical Review B, 1972