Reflectance anisotropy of the GaAs(001) (2×4) surface:Ab initiocalculations
- 15 December 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (23) , 16739-16743
- https://doi.org/10.1103/physrevb.52.16739
Abstract
Using an ab initio, nonlocal pseudopotential method, we have calculated the reflectance anisotropy of three different models of the GaAs(001) (2×4) surface. We find that the dominant contribution to the anisotropy comes from optical transitions between bulk valence-band states and unoccupied surface states. The best fit to the low-temperature experimental reflectance anisotropy spectrum, as observed in situ, is obtained from a linear combination of the calculated spectra from the different models taking ∼80% from that due to the β2(2×4) model and ∼20% from that due to the α(2×4) model.Keywords
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