Dependence of the C49–C54 TiSi2 phase transition temperature on film thickness and Si substrate orientation
- 1 May 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 299 (1-2) , 178-182
- https://doi.org/10.1016/s0040-6090(96)09042-6
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Effect of Ti deposition temperature on T i S i x resistivityApplied Physics Letters, 1995
- C49/C54 phase transformation during chemical vapor deposition of TiSi2Journal of Vacuum Science & Technology A, 1994
- Simultaneous occurrence of multiphases in interfacial reactions of ultrahigh vacuum deposited Ti thin films on (111)SiApplied Physics Letters, 1991
- Thermally Stable, Low‐Leakage Self‐Aligned Titanium Silicide JunctionsJournal of the Electrochemical Society, 1990
- Dependence of thermal stability of the titanium silicide/silicon structure on impuritiesApplied Physics Letters, 1990
- Nucleation of a new phase from the interaction of two adjacent phases: Some silicidesJournal of Materials Research, 1988
- Morphological degradation of TiSi2 on 〈100〉 siliconApplied Physics Letters, 1986
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- UV/ozone cleaning of surfacesJournal of Vacuum Science & Technology A, 1985
- Special ApplicationsPublished by Elsevier ,1983