The use of dimethylzinc-amine adducts for the p-doping of InP and related alloys
- 1 May 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 130 (1-2) , 295-299
- https://doi.org/10.1016/0022-0248(93)90864-s
Abstract
No abstract availableKeywords
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- Zinc Doping of MOCVD GaAsJournal of Crystal Growth, 1984