The growth by MOCVD of low-doped p-Type GaAs using a dimethylzinc adduct
- 1 August 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 91 (1-2) , 63-66
- https://doi.org/10.1016/0022-0248(88)90367-3
Abstract
No abstract availableKeywords
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