Si overgrowth on Si(111)√3 × √3-B surface phase
- 1 May 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 352-354, 358-363
- https://doi.org/10.1016/0039-6028(95)01160-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- An ultra-high resolution control unit for a scanning tunnelling microscopeThin Solid Films, 1995
- STM study of surface reconstructions of Si(111):BPhysical Review B, 1994
- Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron DiffractionJapanese Journal of Applied Physics, 1994
- Surface self-diffusion of Si on Si(001)Surface Science, 1992
- Adsorption of boron on Si(111): Physics, chemistry, and atomic-scale electronic devicesJournal of Vacuum Science & Technology A, 1990
- Structure of (√3×√3) R 30°-B at the Si interface studied by grazing incidence x-ray diffractionApplied Physics Letters, 1990
- Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of siliconApplied Physics Letters, 1989
- Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES studySurface Science, 1988
- Low energy electron diffraction beam profiles and phase transition at Si(111)-7 X 7 surfaceSurface Science, 1985
- The Si(111) 7 × 7 TO “1 × 1” transitionSurface Science, 1981