Triangular facets on the GaAs(110) surface observed by scanning tunneling microscopy
- 1 July 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 217 (1-2) , 289-297
- https://doi.org/10.1016/0039-6028(89)90550-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Fermi-Level Pinning at the Sb/GaAs(110) Surface Studied by Scanning Tunneling SpectroscopyPhysical Review Letters, 1988
- Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surfacePhysical Review Letters, 1987
- Atom-selective imaging of the GaAs(110) surfacePhysical Review Letters, 1987
- Single-tube three-dimensional scanner for scanning tunneling microscopyReview of Scientific Instruments, 1986
- Scanning tunneling microscope combined with a scanning electron microscopeReview of Scientific Instruments, 1986
- Surface morphology of GaAs(110) by scanning tunneling microscopyPhysical Review B, 1985
- Atomic and other structures of cleaved GaAs(110) surfacesSurface Science, 1984
- Orientation dependence of oxygen adsorption on a cylindrical GaAs sample: I. Auger measurementsSurface Science, 1982
- Correlation of short-range order and sputter dose in GaAs(110) using a vidicon-based LEED systemJournal of Vacuum Science and Technology, 1979
- Texture of surfaces cleaned by ion bombardment and annealingSurface Science, 1970